Research • Research Areas

RF & Microwave Technology, Circuits & Systems


Increasing demands in the telecommunications market have put stringent requirements on the design of RF components. The RFIC Group focuses on the design of transceiver architectures for contemporary communication protocols.


Transceiver Design:

Trends in interactive multimedia services have forced the development of new wireless systems that possess greater bandwidths. Data communication systems compliant with wireless network standards have found widespread use over the last few years in meeting market demands.
The RF Design Group works on the design of transceiver components for UltraWideBand standards in the 3.1 GHz to 10.6 GHz range and the integration of RF-MEMS components to the transceiver building blocks. LNA: Critical parameters to consider in designing a Low Noise Amplifier (LNA) are its frequency response, gain, input-output matching, and noise.

The RFIC Group has designed an LNA which operates at 5-6 GHz frequency range and fabricated using the AMS 0.35 SiGe BiCMOS process. The active area of the LNA die is 595µm x 925µm. The simulation and measurement results of 5-6 GHz wideband single-stage cascode LNA are in close agreement. The circuit consumes only 10.6 mW under 3.3V supply voltage.


Phase noise, tuning range, output power, and power dissipation are the main parameters determining the performance of a Voltage Controlled Oscillators (VCO). Using the AMS 0.35 SiGe BiCMOS process, a 4.5-5.8 GHz VCO circuit for Wireless Local Area Networks (WLAN) has been realized. The measured phase noise of the circuit is -110.7 dBc/Hz at 1MHz offset from 5.4 GHz carrier frequency.

PLL and CDR:

Phase locked loops (PLLs) and clock recovery circuits (CRCs) find wide application in areas such as communications, wireless systems, digital circuits, and disk drive electronics. The RFIC Group of Sabanci collaborated with ST Microelectronics Istanbul Design Center for the design of PLL based clock recovery circuits. A circuit was designed and verified at 90-nm digital CMOS technology of ST
Microelectronics and complies with the requirements of Bellcore GR-253 SONET OC-12 standard.

Ultra Wide Band (UWB) Research:

UWB technology has found military applications such as ground penetrating radar (GPR), wall penetrating radar, secure communications, and precision positioning/ tracking. There is also a growing interest in the commercial use of UWB technology such as in Wireless Personal Area Networks (WPAN). This interest has resulted from increasing demand for much higher data rates on the order of hundreds of megabits since future wireless networks require very large transmission bandwidths to reach these data rates. The RFIC group conducts research on UWB pulse generation. A digitally tunable UWB pulse generator for an impulse type of pulse generator is implemented using Step Recovery Diode (SRD), PIN diodes, and transmission lines.


Faculty: Yasar Gurbuz, Ibrahim Tekin, Ayhan Bozkurt

Recent Projects:

-- TARGET Top Amplifier Research Groups in a European Team, supported by EU 6th Framework, 2004-2008.

-- Realization of State-of-the-art IEEE802.11a, 15 (UWB) Transceiver Chipset and Compatible RF MEMS Components, supported by the Scientific and Technological Research Council of Turkey (TUBITAK), 2005-2008.

Recent/Relevant Papers:

--Design of a 4.2-5.4 GHz differential LC VCO using 0.35 µm SiGe BiCMOS technology, Esame, O., Tekin, I., Gurbuz, Y., Bozkurt, A., Proc. IEEE Sarnoff Symposium, Princeton, NJ, USA, 27-28 March 2006.

-- Design and implementation of a low noise and low power, SiGe-BiCMOS LNA for IEEE 802.11applications, Kaynak, M., Tekin, I., Gurbuz, Y., Bozkurt, A., Proc. IEEE LISAT Conference, Farmingdale, NY, USA, 5 May, 2006.

-- An N-Bit digitally variable ultra wideband pulse generator for GPR and UWB applications, Yilmaz, S., Tekin, <., Microwave and Optical Technology Letters, 48(7), 2006.

-- Diamond semiconductor technology for RF device applications, Gurbuz, Y., Esame, O., Tekin, I., Kang, W. P., Davidson, J. L., Solid-State Electronics, 49, 1055-1070, 2005.

-- Design, fabrication and performance evaluation of polycrystalline diamond based power diodes, Kang, W. P., Davidson, J. L., Kerns, D. V., Gurbuz, Y., Zhou, Q., IEEE Transactions on Power Electronics, 20(1), 1 - 10, 2005.

-- Design and verification of a PLL based clock and data recovery circuit, Salman, E., Akin, H., Gursoy, O., Ergintav, A., Tekin, I., Bozkurt, A., Gurbuz, Y., Proc. Mediterranean Microwave Symposium, Athens, Greece, September 2005.

-- UWB microstrip filter design using a time domain technique, Tekin, I., Microwave and Optical Technology Letters, 47(4), 387- 391, 2005.

-- Power amplifier design for IEEE 802.11a standard using AMS 0.35 SiGe BiCMOS technology, Tonga, N., Kaynak, M., Gurbuz, Y., Bozkurt, A., Tekin, I., Proc. TARGET Workshop on RF Power Amplifier, Orvieto, Italy, April 2005.

-- A type ii fourth order fractional-n frequency synthesizer design for bluetooth applications, Yaldiz, S., Ozdemir, S. , Ergintav, A., Tekin, I., Bozkurt, A., Gurbuz, Y., Proc. Mediterranean Microwave Symposium, Athens, Greece, September 2005.

-- Performance comparison of state-of-the-art heterojunction bipolar devices (HBT) based on AlGaAs/GaAs, Si/SiGe and InGaAs/InP, Esame, O., Gurbuz, Y., Ibrahim, T., Bozkurt, A., Microelectronics Journal, 35(11), 901-908, 2004.