Graphene is an extended honeycomb network of sp2-hybridized carbon atoms and is the fırst example of a close packed two dimensional crystalline material isolated in nature. It is a potential candidate as a replacement for traditional silicon in next generation electronic devices, because of its tremendous range of properties such as extremely high mobility, high mechanical strength, flexibility and stability at room temperature in spite of the atomic thickness.Therefore it can be used to develop highly efficient carbon-based electronics, but the lack of band gap has made its application challenging, especially for switching devices such as transistors. Conventional electron-beam lithography combined with plasma etching techniques were used to scale down its dimensions to nanoscale but plasma etching introduces defects in graphene, which cause localisation of charge carriers. Therefore we need a new lithography technique which will allow performing atomic resolution patterning without damaging the graphene layer. The scanning probe lithography also referred to as atomic force microscopy based local anodic oxidation, provided a better option because it offers resist-free lithography, thus avoiding contamination of the graphene layer. My presentation will also include the investigation of influence of
grain boundaries and mechanical deformations in graphene film on the electric charge transport with conductive atomic force microcopy.