Abstract

Transmit/Receive Module (T/R Module) is one of the most essential blocks for Phased Array Radio Detection and Ranging (RADAR) system; due to being very influential on system level performance. To achieve high performance specifications, T/R Module structures are constructed with using III-V devices, which has some significant disadvantages; they are costly, and also consume too much area and power. As a result, application area of T/R Module is mainly restricted with the military and dedicated applications. In recent years, SiGe BiCMOS technology has started to be an emerging competitor to III-V devices, with the help of bandgap engineering. SiGe BiCMOS based T/R Module structures are facilitating similar or better performance parameters with a much lower cost, which gives a chance to T/R Module not only used for military purposes, but also for commercial applications. For this reason, this thesis has focused on SiGe BiCMOS based X-Band T/R Module, specifically on its two significant blocks; Low Noise Amplifier (LNA), and Phase Shifter.

Low Noise Amplifier is the first block of the receiver chain of the T/R Module; as a result its performance is very influential on the metrics of receiver, such as Noise Figure (NF), and gain. In this thesis, designing procedures for three different high dynamic range LNA structures are described, using 0.13µm SiGe IHP-Microelectronics  and 0.13µm SiGe IBM technology. To achieve a high dynamic range, three different methodologies implemented and compared; single-stage cascode LNA, telescopic LNA, and two-stage cascode LNA. Among these, two-stage cascode LNA achieved better performance metrics of -3.72dBm level for input-compression point, total gain exceeding 20.5dB, a NF performance of about 2dB, and a power consumption of 115.8mW.

Phase Shifter is used both in receiver and transmitting chain, as a result it is also crucial for the performance of the T/R Module. The design, implemented in 0.13µm SiGe IBM technology, had aimed to combine advantages of different topologies, such as passive phase shifter and vector modulator, to achieve a high phase resolution in wide bandwidth, and high linearity. The designed hybrid Phase Shifter achieves at most 2.550 of RMS phase error and 15dBm of input-P1dB, and performing a 7-bit operation over a 4GHz bandwidth at X-Band. On the other hand, the designed phase shifter can generate, correction states, to lower RMS phase error.

 

 

[start_dates] => Array ( [0] => 2014-07-25 00:00:00 ) [end_dates] => Array ( [0] => 2014-08-06 00:00:00 ) [where] => FENS G025 [headline] => [comments_count] => 0 [created] => 1406290105 [error] => [errorcode] => 0 ) --> MSc. Thesis Defense: Can Çalışkan | Faculty of Engineering and Natural Sciences
MSc. Thesis Defense: Can Çalışkan
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  • MSc. Thesis Defense: Can Çalışkan

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HIGH DYNAMIC RANGE LOW NOISE AMPLIFIER AND WIDEBAND HYBRID PHASE SHIFTER FOR SIGE BICMOS PHASED ARRAY T/R MODULES

    Can ÇALIŞKAN
Electronics Engineering, M.Sc. Thesis, 2014

 Thesis Jury
Prof. Dr. Yaşar Gürbüz (Thesis Supervisor), Assoc. Prof. Meriç Özcan, Assoc. Prof. Erkay Savaş

Keywords: T/R Module, SiGe BiCMOS, Low Noise Amplifier, Phase Shifter, Linearity, Hybrid, Wideband

     Date &Time: August 6th, 2014 – 2:00 PM

Place: FENS G025



Abstract

Transmit/Receive Module (T/R Module) is one of the most essential blocks for Phased Array Radio Detection and Ranging (RADAR) system; due to being very influential on system level performance. To achieve high performance specifications, T/R Module structures are constructed with using III-V devices, which has some significant disadvantages; they are costly, and also consume too much area and power. As a result, application area of T/R Module is mainly restricted with the military and dedicated applications. In recent years, SiGe BiCMOS technology has started to be an emerging competitor to III-V devices, with the help of bandgap engineering. SiGe BiCMOS based T/R Module structures are facilitating similar or better performance parameters with a much lower cost, which gives a chance to T/R Module not only used for military purposes, but also for commercial applications. For this reason, this thesis has focused on SiGe BiCMOS based X-Band T/R Module, specifically on its two significant blocks; Low Noise Amplifier (LNA), and Phase Shifter.

Low Noise Amplifier is the first block of the receiver chain of the T/R Module; as a result its performance is very influential on the metrics of receiver, such as Noise Figure (NF), and gain. In this thesis, designing procedures for three different high dynamic range LNA structures are described, using 0.13µm SiGe IHP-Microelectronics  and 0.13µm SiGe IBM technology. To achieve a high dynamic range, three different methodologies implemented and compared; single-stage cascode LNA, telescopic LNA, and two-stage cascode LNA. Among these, two-stage cascode LNA achieved better performance metrics of -3.72dBm level for input-compression point, total gain exceeding 20.5dB, a NF performance of about 2dB, and a power consumption of 115.8mW.

Phase Shifter is used both in receiver and transmitting chain, as a result it is also crucial for the performance of the T/R Module. The design, implemented in 0.13µm SiGe IBM technology, had aimed to combine advantages of different topologies, such as passive phase shifter and vector modulator, to achieve a high phase resolution in wide bandwidth, and high linearity. The designed hybrid Phase Shifter achieves at most 2.550 of RMS phase error and 15dBm of input-P1dB, and performing a 7-bit operation over a 4GHz bandwidth at X-Band. On the other hand, the designed phase shifter can generate, correction states, to lower RMS phase error.