MODELING, DESIGN AND FABRICATION OF METAL-INSULATOR-METAL DIODES AS RECTENNA ELEMENT FOR INFRARED ENERGY HARVESTING AND DETECTION APPLICATIONS
Electronics Engineering, MSc. Thesis, 2015
Prof. Dr. Yaşar Gürbüz (Thesis Advisor),
Assoc. Prof. Dr. Meriç Özcan,
Asst. Prof. Dr. YalçınYamaner
Date &Time: August 3rd, 2015 – 9:30 AM
Place: FENS G035
Keywords : Metal-Insulator-Metal (MIM) diode, tunneling, device modeling, rectenna, rectenna elements, Infrared (IR) harvesting, Infrared (IR) detection
Current energy harvesting and detection devices operating in THz frequency regime endure in adequate efficiency despite the fact considerably high fabrication cost. Antenna-coupled rectifiers (rectennas) are one of the most potential candidates for newer paradigms arising in THz energy harvesting and detection realm. Employing THz antennas coupled with Metal-Insulator-Metal (MIM) tunneling diodes termed as rectenna is viable solution for efficient THz energy harvester and detector rendering significantly low fabrication cost. In this thesis, innovative and efficient antenna-coupled metal-insulator-metal diode for energy harvesting and detection applications at 60 THz is presented.
The MIM diode model is developed and optimized for THz energy harvesters. MIM diodes are modelled and simulated in MATLAB environment. Parametric analysis to extract the physical properties of MIM structure is performed and IC compatible material sets for MIM structure are selected for fabrication of diodes at desired frequency. Unlike the material choices already available in the literature comparatively hard to process and expensive like Ni and Nb2O5, MIM and MIIM diodes are fabricated with materials set Au, Al, Cr, Ti, Al2O3, Cr2O3 and TiO2. Electrical DC measurements and characterization of fabricated MIM and MIIM diodes are conducted to evaluate device performance. At zero bias 2.3 kΩ resistance and -6.02 A/W responsivity from these diodes are obtained leading to overall 12% efficiency enhancement in rectennas for THz energy harvesting.