Faculty of Engineering and Natural Sciences
Imaging of Individual Acceptor Atoms in III-V Semiconductors by Cross-sectional Scanning Tunneling Microscopy
Eindhoven University of Technology, Department of Applied Physics
Photonics and Semiconductor Nanophysics (PSN) Group
NL-5600MB, Eindhoven, The Netherlands
We use cross-sectional scanning tunneling microscopy (X-STM) to investigate on the
atomic scale the electronic state of dopant atoms and the composition profile of low dimensional III-V semiconductor nanostructures including self-assembled quantum dots,
quantum rings and quantum cascade lasers. Recently, we have started to study the charge
distribution around individual magnetic impurities embedded in a range of binary semiconducting materials as a first step towards the spin manipulation on the atomic
scale. In this respect, the local distribution of a single hole bound to a single magnetic Mn
acceptor is spatially mapped in a GaAs host directly with X-STM. In our experiments the
STM tip is also successfully used as a tool to manipulate the charge state of a single Mn
atom both at room and low temperatures (T = 4.5 K). In my presentation, I will give brief
information on our cross-sectional technique and discuss particularly the STM analysis of
the peculiar local electronic structure and the wave functions of acceptor states in the
vicinity of semiconductor/vacuum interface [1-3].
 C. Celebi et al., Phys. Rev. B 77, 075328 (2008).
 A. M. Yakunin et al., Phys. Rev. Lett. 92, 216806 (2004).
 R. de Kort et al., Phys. Rev. B 63, 125336 (2001).
April 24, 2008, 15:40, FENS L035