A. Sıddıki; "Inferring the Transport Properties of Edge-States...", Oc t. 21, 11:40, FASS G049

- FENS
- A. Sıddıki; "Inferring the Transport Properties of Edge-States...", Oc t. 21, 11:40, FASS G049

**Faculty of Engineering and Natural Sciences
SEMINAR ANNOUNCEMENT**

**Inferring the Transport Properties of Edge-States Formed at Quantum Hall based Aharonov-Bohm Interferometers Theoretically**

*Dr. Afif Sıddıki, Muğla University*

Recent low-temperature transport experiments, utilizes the quantum Hall based interferometers to investigate the quantum nature of particles. Particularly, the Aharonov-Bohm (AB) interference experiments became a paradigm [1,2], which infers the AB phases of both the electrons and the quasi- particles. The single particle edge-state picture is used to describe transport, meanwhile electrostatics is enriched by interactions and both are used to explain the observed AB oscillations [2]. However, the actual spatial distribution of the edge-states is still under debate for real samples, since handling the full electrostatics is a formidable task, although, several powerful techniques are used [3]. By full electrostatics we mean both handing the crystal growth parameters and the "edge" definition of the interferometer, /i.e/. gate, etched or trench-gated.

In this talk, I provide a semi-analytical scheme to model AB interferometers induced on a two dimensional electron gas (2DEG) by solving the 3D Poisson for the given hetero-structure [4]. Our calculation scheme also takes into account the lithographically defined surface patterns to obtain the electron and potential distributions under quantized Hall conditions [5]. The distinct part of our calculation is that we can handle both gate and etching defined geometries. Our findings show that the etching defined samples provide a sharper potential profile than that of gate defined [6]. In addition we can define the structure with trench gating, which is the case for the experiments, and show that the formation of the edge-states is strongly influenced.

[1] F. E. Camino, W. Zhou, and V. J. Goldman, Phys. Rev. Lett. *95*, 246802 (2005).

[2] F. E. Camino, W. Zhou, and V. J. Goldman, Phys. Rev. Lett. *98*, 076805 (2007).

[3] S. Ihnatsenka and I. V. Zozoulenko, Phys. Rev. B *76*, 045338 (2007).

[4] A. Weichselbaum and S. E. Ulloa, Phys. Rev E *68*, 056707 (2003).

[5] S. Arslan, E. Cicek, D. Eksi, S. Aktas, A. Weichselbaum, and A. Siddiki, Phys. Rev. B *78*, 125423 (2008).

[6] A. Siddiki and F. Marquardt, Phys. Rev. B, *75*, 045325 (2007).

**October 21, 11:40, FASS G049**

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