Faculty of Engineering and Natural Sciences
Inferring the Transport Properties of Edge-States Formed at Quantum Hall based Aharonov-Bohm Interferometers Theoretically
Dr. Afif Sıddıki, Muğla University
Recent low-temperature transport experiments, utilizes the quantum Hall based interferometers to investigate the quantum nature of particles. Particularly, the Aharonov-Bohm (AB) interference experiments became a paradigm [1,2], which infers the AB phases of both the electrons and the quasi- particles. The single particle edge-state picture is used to describe transport, meanwhile electrostatics is enriched by interactions and both are used to explain the observed AB oscillations . However, the actual spatial distribution of the edge-states is still under debate for real samples, since handling the full electrostatics is a formidable task, although, several powerful techniques are used . By full electrostatics we mean both handing the crystal growth parameters and the "edge" definition of the interferometer, /i.e/. gate, etched or trench-gated.
In this talk, I provide a semi-analytical scheme to model AB interferometers induced on a two dimensional electron gas (2DEG) by solving the 3D Poisson for the given hetero-structure . Our calculation scheme also takes into account the lithographically defined surface patterns to obtain the electron and potential distributions under quantized Hall conditions . The distinct part of our calculation is that we can handle both gate and etching defined geometries. Our findings show that the etching defined samples provide a sharper potential profile than that of gate defined . In addition we can define the structure with trench gating, which is the case for the experiments, and show that the formation of the edge-states is strongly influenced.
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October 21, 11:40, FASS G049