3-D Position
Sensitive Room Temperature Semiconductor Detectors – TlBr as a
Promising New Detector Material
Speaker: Dr. Burcin Donmez, University of Michigan
Abstract: Gamma-ray
spectrometers with 3-D position sensitivity are of interest in homeland
security, high energy astrophysics and medical imaging applications.
Current systems developed rely on thick room temperature semiconductor
detectors, especially cadmium zinc telluride (CdZnTe). In this
presentation, basic operation principles of semiconductor detectors
based on CdZnTe and thallium bromide (TlBr) will be discussed. Thallium
bromide (TlBr) is a promising new semiconductor detector material which
has a high gamma-ray stopping power due to its high density (7.56 g/cm3)
and high atomic number (Tl: 81, Br: 35). Also, its wide band gap (2.68
eV) makes it very suitable for room-temperature operation. However,
current TlBr detectors suffer from polarization effect which degrade
spectroscopic performance over time when bias voltage is applied.
Current status of TlBr detectors will be discussed.
Bio: Dr. Dönmez got his B.S. from Middle East Technical University,
Department of Physics, in 1997. He got his PhD in Physics from
University of New Hampshire in 2006 and continued working there as a
scientist until 2007. Since then he is been working as a postdoctoral
research associate at the Department of Nuclear Engineering and
Radiological Sciences, University of Michigan.
September 29, Wednesday, 13:40, FENS L045
