| Mühendislik ve Doğa Bilimleri Fakültesi

Cleva Ow Yang Mühendislik ve Doğa Bilimleri Fakültesi Network Öğretim Üyesi (216) 483 9592 clevaow-yangsabanciunivedu

Personal Web

http://people.sabanciuniv.edu/~cleva/

Jobs

Network Öğretim Üyesi

Areas of Interest

mechanisms of persistent luminescence plasmonic insulators materials for energy harvesting and storage cement regeneration Circular economy and sustainability in materials process industries structure and properties of interfaces thermodynamics and kinetics of phase transformation in materials controlled assembly of nanoparticles

Memberships

Materials Research Society

1) W. Gao, J. Chen, C.W. Ow-Yang, D. McNabb, J.B. Vander Sande, “The stability of high Tc BSCCO-Ag superconducting microcomposites in water, some in organic solutions and organic solvents”, Physica C 193 (3-4), 455 (1992).

2) C.W. Ow-Yang, D. Spinner, D.C. Paine, ”A TRR Study of the Kinetics of the a/c-transformation in DC Magnetron Sputtered Indium Tin Oxide,” Journal of Applied Physics 83 (1), 145-154 (1998).

3) P.K. Song, Y. Shigesato, I. Yasui, C.W. Ow-Yang, and D.C. Paine, “Study on Crystallinity of Indium Oxide Films Deposited by DC Magnetron Sputtering,” Japanese Journal of Applied Physics 37, 1870-1876 (1998).

4) G. Leo, V. Berger, C. W. Ow-Yang, J. Nagle, "Parametric Fluorescence in oxidized AlGaAs waveguides," Journal of the Optical Society of America B-Optical Physics. 16 (9), 1597-1602 (1999).

5) D.C. Paine, T. Whitson, D. Janiac, R. Beresford, C.W. Ow-Yang, and B. Lewis, ”A Study of Low Temperature Crystallization of Amorphous Thin Film Indium Tin Oxide”, Journal of Applied Physics 85 (12), 8445-8450 (1999).

6) C.W. Ow-Yang and D.C. Paine, ”Microstructural Evolution During Crystallization in Amorphous Indium Tin Oxide Thin Films”, EUROMAT 99 Conference Proceedings Vol. 9, Interface Controlled Materials, Ed. M. Rühle, K. Gleiter, (Weinheim, Germany; Wiley-VCH Verlag GmbH), 106-111 (1999).

7) C.W. Ow-Yang, Y. Shigesato, and D.C. Paine, ”Interfacial stability of an indium tin oxide thin film deposited on Si and Si0.85Ge0.15”, Journal of Applied Physics 88 (6), 3717-3724 (2000).