Haberler

inzva 22-28 Ocak tarihlerinde Beykoz Kundura, İstanbul’da bir kış kampı düzenleyecektir. Kamp boyunca öğrenciler eğitimlere ve yarışmalara katılarak kendilerini algoritmalarda geliştirme ve ders dışı etkinliklerle sosyalleşme fırsatı bulacaklardır. Üniversitede hazırlık, birinci, ikinci veya üçüncü sınıfta okuyan öğrenciler kampa katılabilirler.

Vertical stacking of integrated circuits, known as the 3-D integration, has emerged as a breakthrough solution to overcome the limitations of traditional continuous scaling of planar devices. 3-D integration enables superior performances with reduced system sizes. Moreover, it improves the system heterogeneity while reducing the processing complexity by separately fabricating the chips with different functionalities (e.g., memory and logic). Among several 3-D integration schemes, wafer-to-wafer hybrid bonding is distinguished as the key technology to achieving high-density interconnections required for fine-partitioning 3-D system-on-chip applications. In this bonding technology, both wafers are finished with a dielectric layer with embedded Cu pads. The wafer pair is then aligned face-to-face with a small vertical distance between them, on the order of a few tens of micrometers. The top wafer is pushed through a localized area at its center to establish the initial contact between wafers. The bonding is then propagated in a wave-like pattern due to the interaction forces between opposing wafers.

Vertical stacking of integrated circuits, known as the 3-D integration, has emerged as a breakthrough solution to overcome the limitations of traditional continuous scaling of planar devices. 3-D integration enables superior performances with reduced system sizes. Moreover, it improves the system heterogeneity while reducing the processing complexity by separately fabricating the chips with different functionalities (e.g., memory and logic). Among several 3-D integration schemes, wafer-to-wafer hybrid bonding is distinguished as the key technology to achieving high-density interconnections required for fine-partitioning 3-D system-on-chip applications. In this bonding technology, both wafers are finished with a dielectric layer with embedded Cu pads. The wafer pair is then aligned face-to-face with a small vertical distance between them, on the order of a few tens of micrometers. The top wafer is pushed through a localized area at its center to establish the initial contact between wafers. The bonding is then propagated in a wave-like pattern due to the interaction forces between opposing wafers.